2SA821 -0.03a , -210 v pnp plastic encapsulated transistor elektronische bauelemente 14-feb-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c e k f d b g h j ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? high breakdown voltage ? low transition frequency classification of h fe product-rank 2SA821-n 2sa8 21-p 2SA821-q range 56~120 82~180 82~180 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo -210 v collector to emitter voltage v ceo -210 v emitter to base voltage v ebo -5 v collector current - continuous i c -30 ma collector power dissipation p c 250 mw thermal resistance from junction to ambient r ja 500 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo -210 - - v i c = -0.05ma, i e =0 collector to emitter breakdown voltage v (br)ceo -210 - - v i c = -0.1ma, i b =0 emitter to base br eakdown voltage v (br)ebo -5 - - v i e = -0.05ma, i c =0 collector cut-off current i cbo - - -1 a v cb = -150v, i e =0 emitter cut-off current i ebo - - -1 a v eb = -4.5v, i c =0 dc current gain h fe 56 - 270 v ce = -3v, i c = -5ma collector to emitter saturation voltage v ce(sat) - - -0.6 v i c = -2ma, i b = -0.2ma transition frequency f t - 50 - mhz v ce = -5v, i c = -2ma collector output capacitance c ob - 8 - pf v cb = -10v, i e =0, f=1mhz to-92 ? emitte r ? collector ? base ref. millimeter min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76
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